Datasheet KSB1366 (Fairchild)

KSB136 6 KSB1366 LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012 1 TO-220F 1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C

unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.5 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 100 µA IEBO Emitter Cut-off Current VEB = - 7V, IC = 0 - 100 µA hFE1 DC Current Gain VCE = - 5V, IC = - 0.5A 100 320 hFE2 VCE = - 5V, IC = - 3A 20 VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.5 - 1 V VBE(on) Base-Emitter ON Voltage VCE = - 5V, IC = - 0.5A - 0.7 - 1 V fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.5A 9 MHz
hFE Classification
Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000