Datasheet GMICP2731-10 (Microchip) - 15

GMICP2731-10 Application Circuits Figure 3-2. Assembly Drawing
C9 C10 C17 C18 C1 C2 C3 C4 C14 C13 C9 C10 C1 C2 C3 C4 U1 U1 C5 C6 C7 C8 C21 C11 C12 C22 R1 D1 C16 C15 R2 D2 C19 C20 C5 C6 C7 C8 C21 C11 C12 C22 DETAIL A - BONDING SCALE 4 : 1
Assembly Guidance
Amplifier must be biased from both sides. Optimum RF power performance achieved by minimizing output RF bond wire length. Interconnect assembly notes: • Ball bonding is the preferred technique. • Force, time, and ultrasonic parameters are critical. • Aluminum wire bonding is not recommended. • Bond wire diameter of 1 mil is recommended. Die attach of component using adhesive: • Vacuum collets are the preferred method of pickup. • Pickup method must consider the avoidance of die air bridges. • Die suitable for eutectic and epoxy die attach. • Where epoxy is used, high thermal conductivity Silver Sintered Epoxy is recommended: – Namics H9890–6 – Kyocera CT2700R7S
Reflow Process
• Maximum temperature 320 ºC for 30 seconds. • Material matching for Coefficient of thermal expansion is crucial for long-term reliability
Bias-Up Procedure
1. Set VG = –5V 2. Set VD to 20V – 24V 3. Adjust VG positive until ID quiescent is 112 mA 4. Limit ID to 2A 5. Apply RF Signal
Bias-down Procedure
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Datasheet
DS-00004072A-page 15 and its subsidiaries Document Outline Product Overview Table of Contents 1. Electrical Specifications 1.1. Typical Electrical Performance 1.2. Absolute Maximum Ratings 1.3. Typical RF Performance 1.3.1. Typical Small Signal Performance 1.3.2. Typical Power Performance 1.3.3. Typical 2-Tones RF Performance 2. Die Specifications 3. Application Circuits 4. Ordering, Shipping, and Handling 4.1. Handling Recommendations 4.2. Ordering Information 5. Revision History The Microchip Website Product Change Notification Service Customer Support Product Identification System Microchip Devices Code Protection Feature Legal Notice Trademarks Quality Management System Worldwide Sales and Service