Datasheet FDS7788 (Fairchild) - 2

HerstellerFairchild
Beschreibung30V N-Channel PowerTrench MOSFET
Seiten / Seite5 / 2 — FDS. Electrical Characteristics. 7788. Symbol. Parameter. Test …
Dateiformat / GrößePDF / 115 Kb
DokumentenspracheEnglisch

FDS. Electrical Characteristics. 7788. Symbol. Parameter. Test Conditions. Min. Typ. Max Units. Off Characteristics. On Characteristics

FDS Electrical Characteristics 7788 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics On Characteristics

Modelllinie für dieses Datenblatt

Textversion des Dokuments

FDS Electrical Characteristics
T = 25°C unless otherwise noted
7788
A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 25 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –5.4 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 18 A 3.0 4.0 mΩ On–Resistance VGS = 4.5 V, ID = 17 A 3.8 5.0 VGS = 10 V, ID = 18 A, TJ = 125°C 4.3 6.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 10 V, ID = 18 A 112 S
Dynamic Characteristics
Ciss Input Capacitance 3845 pF VDS = 15 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 930 pF Crss Reverse Transfer Capacitance 368 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω
Switching Characteristics (Note 2)
t V d(on) Turn–On Delay Time DD = 15 V, ID = 1 A, 15 27 ns V t GS = 10 V, RGEN = 6 Ω r Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 62 99 ns tf Turn–Off Fall Time 36 58 ns Q V g Total Gate Charge DS = 15 V, ID = 18 A, 37 48 nC V Q GS = 5.0 V gs Gate–Source Charge 10 nC Qgd Gate–Drain Charge 14 nC
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward VSD V Voltage GS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time IF = 18 A, 39 nS Q diF/dt = 100 A/µs rr Diode Reverse Recovery Charge 33 nC
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a mounted on a 1in2 mounted on a .04 in2 minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7788 Rev F(W)