Datasheet UF3C065080B7S (UnitedSiC) - 6

HerstellerUnitedSiC
Beschreibung650V-85mW SiC FET
Seiten / Seite10 / 6 — 300. 40. Tj. =. 175°C. Tj. =. -55°C. ). 250. W. Tj. =. 25°C. Tj. =. 25°C. …
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DokumentenspracheEnglisch

300. 40. Tj. =. 175°C. Tj. =. -55°C. ). 250. W. Tj. =. 25°C. Tj. =. 25°C. (m. Tj. =. -. 55°C. 30. ). Tj. =. 175°C. n). A(. o. 200. (S. I. ,. D. R. D. ,. nt. e. 150. c. er. 20. r. ant. Cu. is. s. 100. n. e. ai. R. r. -. 10. D. 50. On. 0. 0. 0. 10

300 40 Tj = 175°C Tj = -55°C ) 250 W Tj = 25°C Tj = 25°C (m Tj = - 55°C 30 ) Tj = 175°C n) A( o 200 (S I , D R D , nt e 150 c er 20 r ant Cu is s 100 n e ai R r - 10 D 50 On 0 0 0 10

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300 40 Tj = 175°C Tj = -55°C ) 250 W Tj = 25°C Tj = 25°C (m Tj = - 55°C 30 ) Tj = 175°C n) A( o 200 (S I , D R D , nt e 150 c er 20 r ant Cu is s 100 n e ai R r - 10 D 50 On 0 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Figure 5. Typical drain-source on-resistances at VGS = Figure 6. Typical transfer characteristics at VDS = 5V 12V 6 20 ) 5 V V ( 15 V th V GS , 4 , e e g g 10 lta lta o 3 o V V d ec ol r 5 h 2 s ou e S r - Th te 0 1 Ga 0 -5 -100 -50 0 50 100 150 200 0 5 10 15 20 25 30 35 40 Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7. Threshold voltage vs. junction temperature Figure 8. Typical gate charge at VDS = 400V and ID = at VDS = 5V and ID = 10mA 20A Datasheet: UF3C065080B7S Rev. A, November 2020 6