Datasheet MMBT2369L, MMBT2369AL (ON Semiconductor) - 5

HerstellerON Semiconductor
BeschreibungSwitching Transistors NPN Silicon
Seiten / Seite7 / 5 — MMBT2369L, MMBT2369AL. Figure 11. Minimum Current Gain Characteristics. …
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DokumentenspracheEnglisch

MMBT2369L, MMBT2369AL. Figure 11. Minimum Current Gain Characteristics. Figure 12. Saturation Voltage Limits. www.onsemi.com

MMBT2369L, MMBT2369AL Figure 11 Minimum Current Gain Characteristics Figure 12 Saturation Voltage Limits www.onsemi.com

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MMBT2369L, MMBT2369AL
200 TJ = 125°C GAIN VCE = 1 V 75°C 100 25°C TJ = 25°C and 75°C -15°C 50 , MINIMUM DC CURRENT -55°C FEh 20 1 2 5 10 20 50 100 IC, COLLECTOR CURRENT (mA)
Figure 11. Minimum Current Gain Characteristics
1.4 β TS) F = 10 1.2 TJ = 25°C MAX VBE(sat) 1.0 TAGE (VOL 0.8 MIN VBE(sat) TION VOL TURA 0.6 , SA 0.4 (sat) MAX V V CE(sat) 0.2 1 2 5 10 20 50 100 IC, COLLECTOR CURRENT (mA)
Figure 12. Saturation Voltage Limits www.onsemi.com 5