Datasheet PSMNR55-40SSH (Nexperia)
| Hersteller | Nexperia |
| Beschreibung | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
| Seiten / Seite | 14 / 1 — PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard |
| Revision | 06042021 |
| Dateiformat / Größe | PDF / 335 Kb |
| Dokumentensprache | Englisch |
PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard
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PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 6 April 2021 Product data sheet 1. General description
500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high ef iciency and low spiking performance usual y associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high ef iciency applications at high switching frequencies, and also safe and reliable switching at high load-current.
2. Features and benefits
• 500 Amp continuous current capability • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection • Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating • Ideal replacement for D2PAK and 10 x 12 mm leadless package types • Qualified to 175 °C • Meets UL2595 requirements for creepage and clearance • Avalanche rated, 100 % tested • Low QG, QGD and QOSS for high ef iciency, especial y at higher switching frequencies • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage • Narrow VGS(th) rating for easy paralleling and improved current sharing • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
3. Applications
• Brushless DC motor control • Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies • Battery protection and Battery Management Systems (BMS) • eFuse and load switch • Hotswap / in-rush current management
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 500 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 375 W Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 6 April 2021 Product data sheet 1. General description
500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high ef iciency and low spiking performance usual y associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high ef iciency applications at high switching frequencies, and also safe and reliable switching at high load-current.
2. Features and benefits
• 500 Amp continuous current capability • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection • Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating • Ideal replacement for D2PAK and 10 x 12 mm leadless package types • Qualified to 175 °C • Meets UL2595 requirements for creepage and clearance • Avalanche rated, 100 % tested • Low QG, QGD and QOSS for high ef iciency, especial y at higher switching frequencies • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage • Narrow VGS(th) rating for easy paralleling and improved current sharing • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
3. Applications
• Brushless DC motor control • Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies • Battery protection and Battery Management Systems (BMS) • eFuse and load switch • Hotswap / in-rush current management
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 500 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 375 W Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents