Datasheet 2N6027, 2N6028 (ON Semiconductor)

HerstellerON Semiconductor
BeschreibungProgrammable Unijunction Transistor
Seiten / Seite6 / 1 — Preferred Device. Programmable Unijunction Transistor Triggers. …
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Preferred Device. Programmable Unijunction Transistor Triggers. PUTs. 40 VOLTS, 300 mW. Features

Datasheet 2N6027, 2N6028 ON Semiconductor, Revision: 6

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link to page 5 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,
40 VOLTS, 300 mW
pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume G requirements, this package is readily adaptable for use in automatic A K insertion equipment.
• Programmable − RBB, h, IV and IP • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
TO−92 (TO−226AA)
• Low Gate to Anode Leakage Current − 10 nA Maximum
CASE 029
• High Peak Output Voltage − 11 V Typical
1 • 2 Low Offset Voltage − 0.35 V Typical (R 3 G = 10 kW) • Pb−Free Packages are Available*
2N 602x AYWW G G 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
1 Anode 2 Gate 3 Cathode
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006
Publication Order Number:
May, 2006 − Rev.6 2N6027/D