Datasheet FR101, FR102, FR103, FR104, FR105, FR106, FR107 (Won-Top Electronics)

HerstellerWon-Top Electronics
Beschreibung1.0A Fast Recovery Diode
Seiten / Seite4 / 1 — ® FR101 – FR107. 1.0A FAST RECOVERY DIODE. WON-TOP ELECTRONICS Pb. …
Dateiformat / GrößePDF / 42 Kb
DokumentenspracheEnglisch

® FR101 – FR107. 1.0A FAST RECOVERY DIODE. WON-TOP ELECTRONICS Pb. Features Diffused Junction Low Forward Voltage Drop

Datasheet FR101, FR102, FR103, FR104, FR105, FR106, FR107 Won-Top Electronics

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® FR101 – FR107
1.0A FAST RECOVERY DIODE
WON-TOP ELECTRONICS Pb
Features Diffused Junction Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability B A A Mechanical Data C Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4 D
Dim DO-41
Min A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 Max All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) Unit VRRM
VRWM
VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.2 V @TA = 25°C
@TA = 100°C IRM 5.0
100 µA Peak Reverse Current
At Rated DC Blocking Voltage @TA = 55°C FR101 FR102 FR103 FR104 FR105 FR106 FR107 Reverse Recovery Time (Note 2) trr Typical Junction Capacitance (Note 3) CJ 15 pF RθJA
RθJL 55
25 °C/W TJ -65 to +125 °C TSTG -65 to +150 °C Typical Thermal Resistance Junction to Ambient (Note 1)
Typical Thermal Resistance Junction to Lead (Note 1)
Operating Temperature Range
Storage Temperature Range 150 250 500 nS Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. © Won-Top Electronics Co., Ltd.
Revision: September, 2012 www.wontop.com
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