Datasheet HMC413QS16G, 413QS16GE (Analog Devices) - 5

HerstellerAnalog Devices
BeschreibungGaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
Seiten / Seite8 / 5 — HMC413QS16G / 413QS16GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 1.6 - 2.2 …
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HMC413QS16G / 413QS16GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 1.6 - 2.2 GHz. Absolute Maximum Ratings. Outline Drawing

HMC413QS16G / 413QS16GE GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Absolute Maximum Ratings Outline Drawing

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HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd1, Vpd2) +4.0 Vdc ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RF Input Power (RFIN)(Vs = +5Vdc, +15 dBm Vpd = +3.6 Vdc) Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) 11 1.56 W (derate 24 mW/°C above 85 °C) Thermal Resistance 42 °C/W (junction to ground paddle) Storage Temperature -65 to +150 °C T Operating Temperature -40 to +85 °C - SM
Outline Drawing
S R IE IF L P M R A E W O & P R NOTES: A 1. LEADFRAME MATERIAL: COPPER ALLOY E 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. IN 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. L 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] HMC413 HMC413QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] HMC413 HMC413QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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