Datasheet HMC409LP4E (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungGaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Seiten / Seite8 / 4 — HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz
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HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz

HMC409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

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HMC409LP4E
v04.1217
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Power Dissipation
40 800 4.4 ) m 35 700 B d ) 4 T t ( 30 600 Max Pdiss @ +85C a (W s N m IO 3.6 ), P 25 500 m Ic s B c PAT d 20 400 ( Icc m 3.2 B ISSI d A 1 ) 15 300 D ER 2.8 r - ), P B d 10 200 W e ( Gain PO Psat IN 2.4 A 5 P1dB 100 G w 0 0 2 o 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 -20 -16 -12 -8 -4 0 4 8 p Vpd (Vdc) INPUT POWER (dBm) r &
EVM vs. Temperature @ 3.5 GHz OFDM
A
54 Mbps Signal
e 14 ) (% 12 lin UDE 10 IT +25 C N +85 C G A 8 -40 C s - M R r O 6 CT E ie V 4 R O RR 2 lif E p 0 10 12 14 16 18 20 22 24 26 28 30 m OUTPUT POWER (dBm) A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal Power Dissipation Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Noise Figure vs. Temperature Gain & Power vs. Supply Voltage Power Compression @ 3.5 GHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Power Down Isolation vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Absolute Maximum Ratings Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Outline Drawing Package Information Application Circuit Pin Descriptions Evaluation PCB List of Materials