Datasheet HMC7441 (Analog Devices) - 5

HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Gain & Power vs. Supply Current Reverse Isolation vs. Temperature @ 29 GHz
0 40 ) m IP -10 35 H -20 ) sat (dB ), P (dB -30 m 30 N IO -40 T (dB LA 1dB O 25 -50 R - C IS ), P B E -60 20 ain (d -70 G W -80 15 O 27 28 29 30 31 32 900 950 1000 1050 1100 Idd (mA) FREQUENCY (GHz) +25C +85C -55C GAIN(dB) P1dB(dBm) Psat(dBm) R & P A
Gain & Power vs. Supply Voltage
E
@ 29 GHz Power Dissipation
IN 40 10 ) m 9 35 (W) sat (dB 8 S - L ), P m 30 R (dB 7 DISSIPATION 1dB 25 IE 6 ), P 20 POWER 5 ain (dB LIF G P 15 4 5.5 5.6 5.7 5.8 5.9 6 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 M Vdd (V) INPUT POWER (dBm) A 28 GHz 30 GHz GAIN(dB) P1dB(dBm) Psat(dBm) 29 GHz 31 GHz Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
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