Datasheet HMC1114PM5E (Analog Devices)

>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier Data Sheet HMC1114PM5E FEATURES FUNCTIONAL BLOCK DIAGRAM High small signal gain: 34.5 dB typical HMC1114PM5E High output power: 42 dBm typical at PIN = 18 dBm ND C C C ND High PAE: 55% typical at P G NI V DD1 NI NI V DD2 V DD2 G IN = 18 dBm 32 31 30 29 28 27 26 25 Frequency range: 2.7 GHz to 3.8 GHz Supply voltage: VDD = 28 V at a quiescent current of 150 mA GND 1 24 GND 5 mm × 5 mm, 32-lead LFCSP_CAV package NIC 2 23 NIC NIC 3 22 NIC APPLICATIONS RFIN 4 21 RFOUT RFIN 5 20 RFOUT Extended battery operation for public mobile radios NIC 6 19 NIC NIC 7 18 NIC Power amplifier stage for wireless infrastructures GND 8 17 GND Test and measurement equipment Commercial and military radars 9 10 11 12 13 14 15 16 PACKAGE BASE C C C C
001
General-purpose transmitter amplification ND ND G NI NI NI NI V GG1 V GG2 G
16824- Figure 1.
GENERAL DESCRIPTION
The HMC1114PM5E is a gallium nitride (GaN), broadband The HMC1114PM5E is ideal for pulsed or continuous wave power amplifier delivering >10 W (up to 42 dBm) typical with (CW) applications, such as wireless infrastructure, radars, up to 55% power added efficiency (PAE) across an instantaneous public mobile radios, and general-purpose amplification. bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at smal signal levels.
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL SUPPLY CURRENT BY VDD ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION PCB OUTLINE DIMENSIONS ORDERING GUIDE