Datasheet HMC8415LP6GE (Analog Devices)

40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier Data Sheet HMC8415LP6GE FEATURES FUNCTIONAL BLOCK DIAGRAM High output power: 46 dBm typical at P A A A A A A A IN = 23 dBm High small signal gain: 32.5 dB typical GG1 GG2 GG3 DD1 DD2 DD3 DD3 V V V V V V V High power gain: 23 dB typical at PIN = 23 dBm Frequency range: 9 GHz to 10.5 GHz High power added efficiency: 40% typical at PIN = 23 dBm HMC8415LP6GE Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA GND GND 6 mm × 6 mm, 40-lead LFSCP RFIN RFOUT GND GND APPLICATIONS Weather radars Marine radars PACKAGE B B B Military radars B B B B BASE
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GG1 GG2 GG3 DD1 DD2 DD3 DD3 V V V V V V V GND
16688- Figure 1.
GENERAL DESCRIPTION
The HMC8415LP6GE is a gal ium nitride (GaN), power amplifier, The HMC8415LP6GE is ideal for pulsed applications, such as delivering 40 W (46 dBm) with more than 37.5% power added wireless weather, marine, and military radar applications. efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT AND PULSOR CIRCUIT USING THE EV1HMC8415LP6G WITH THE DRAIN BIAS PULS0R BOARD RECOMMENDED BIAS SEQUENCE Power-Up Bias Concept for the EV1HMC8415LP6G with the Pulsor Power-Down Bias Concept for the EV1HMC8415LP6G with the Pulsor MAKING AVERAGE TO PULSED APPROXIMATIONS EVALUATION PCB BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE