Datasheet HMC606LC5 (Analog Devices)

HerstellerAnalog Devices
BeschreibungGaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz
Seiten / Seite9 / 1 — GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise,. Distributed Amplifier, 2 …
RevisionJ
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DokumentenspracheEnglisch

GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise,. Distributed Amplifier, 2 GHz to 18 GHz. Data Sheet. HMC606LC5. FEATURES

Datasheet HMC606LC5 Analog Devices, Revision: J

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GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz Data Sheet HMC606LC5 FEATURES FUNCTIONAL BLOCK DIAGRAM Ultralow phase noise: −160 dBc/Hz typical at 10 kHz NC NC NC NC NC NC NC NC Output power for 1 dB compression (P1dB): 15 dBm typical 32 31 30 29 28 27 26 25 at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range NC 1 HMC606LC5 24 NC V 2 23 NC Output third-order intercept (IP3): 27 dBm typical at 2 GHz CC1 NC 3 22 GND to 12 GHz frequency range GND 4 21 RFOUT RFIN 5 20 GND Supply voltage: 5.0 V at 64 mA typical GND 6 19 NC 50 Ω matched input/output NC 7 18 NC NC 8 17 NC 32-terminal, ceramic, leadless chip carrier (LCC) 9 1 APPLICATIONS 1 10 12 13 14 15 16 PACKAGE 2 BASE
001
NC NC NC NC NC NC NC CC Radars, electronic warfare (EW), and electronic counter V GND
14968-
measures (ECMs)
Figure 1.
Microwave radios Test instrumentation Military and space Fiber optic systems GENERAL DESCRIPTION
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm phosphide (InGaP), heterojunction bipolar transistor (HBT), output IP3, and 15 dBm of output power for 1 dB compression monolithic microwave integrated circuit (MMIC) distributed while requiring 64 mA from a 5.0 V supply. The input and output amplifier housed in a 32-terminal, ceramic, leadless chip carrier of the HMC606LC5 amplifier are internally matched to 50 Ω (LCC) package that operates from 2 GHz to 18 GHz. With an and are internally dc blocked. input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)- based distributed amplifiers.
Rev. J Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2017–2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION EVALUATION PRINTED CIRCUIT BOARD (PCB) OUTLINE DIMENSIONS ORDERING GUIDE