Datasheet HMC-ALH382 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz |
| Seiten / Seite | 6 / 1 — HMC-ALH382. GaAs HEMT LOW NOISE. AMPLIFIER, 57 - 65 GHz. Typical … |
| Dateiformat / Größe | PDF / 395 Kb |
| Dokumentensprache | Englisch |
HMC-ALH382. GaAs HEMT LOW NOISE. AMPLIFIER, 57 - 65 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
1
Typical Applications Features
This hmC-Alh382 is ideal for: noise figure: 3.8 dB ip • Short Haul / High Capacity Links p1dB: +12 dBm h • Wireless LANs Gain: 21 dB • Military & Space supply Voltage: +2.5V e - C 50 ohm matched input/output is Die size: 1.55 x 0.73 x 0.1 mm o
Functional Diagram General Description
w n o The hmC-Alh382 is a high dynamic range, four stage GaAs hemT mmiC low noise Amplifier (lnA) which operates between 57 and 65 Ghz. The s - l hmC-Alh382 features 21 dB of small signal gain, r 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply ie voltage. All bond pads and the die backside are Ti/ Au metal ized and the amplifier device is ful y lif passivated for reliable operation. This versatile lnA p is compatible with conventional die attach methods, m as well as thermocompression and thermosonic A wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes.
Electrical Specifications, T = +25° C, Vdd = 2.5V, Idd = 64 mA* A
parameter min. Typ. max. Units frequency range 57 - 65 Ghz Gain 19 21 dB noise figure 4 5.5 dB input return loss 12 dB output return loss 10 dB output power for 1 dB Compression (p1dB) 12 dBm supply Current (idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 100 mA *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve iddtotal = 64 mA Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D
v03.1210
GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
1
Typical Applications Features
This hmC-Alh382 is ideal for: noise figure: 3.8 dB ip • Short Haul / High Capacity Links p1dB: +12 dBm h • Wireless LANs Gain: 21 dB • Military & Space supply Voltage: +2.5V e - C 50 ohm matched input/output is Die size: 1.55 x 0.73 x 0.1 mm o
Functional Diagram General Description
w n o The hmC-Alh382 is a high dynamic range, four stage GaAs hemT mmiC low noise Amplifier (lnA) which operates between 57 and 65 Ghz. The s - l hmC-Alh382 features 21 dB of small signal gain, r 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply ie voltage. All bond pads and the die backside are Ti/ Au metal ized and the amplifier device is ful y lif passivated for reliable operation. This versatile lnA p is compatible with conventional die attach methods, m as well as thermocompression and thermosonic A wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes.
Electrical Specifications, T = +25° C, Vdd = 2.5V, Idd = 64 mA* A
parameter min. Typ. max. Units frequency range 57 - 65 Ghz Gain 19 21 dB noise figure 4 5.5 dB input return loss 12 dB output return loss 10 dB output power for 1 dB Compression (p1dB) 12 dBm supply Current (idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 100 mA *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve iddtotal = 64 mA Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D