Datasheet HMC-AUH317 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 -86 GHz |
| Seiten / Seite | 6 / 1 — HMC-AUH317. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 81 - 86 GHz. Typical … |
| Dateiformat / Größe | PDF / 359 Kb |
| Dokumentensprache | Englisch |
HMC-AUH317. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 81 - 86 GHz. Typical Applications. Features. Functional Diagram
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HMC-AUH317
v04.0511
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features
This hmC-AUh317 is ideal for: Gain: 22 dB • Short Haul / High Capacity Links p1dB: +17.5 dBm 3 • Wireless LAN Bridges supply Voltage: +4V • Military & Space 50 ohm matched input/output • E-Band Communication Systems Die size: 2.65 x 1.6 x 0.05 mm ip h r - C
Functional Diagram
e
General Description
The hmC-AUh317 is a high dynamic range, three w stage GaAs hemT mmiC medium power Amplifier o which operates between 81 and 86 Ghz. The hmC- p AUh317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply r & voltage. All bond pads and the die backside are Ti/Au A metal ized and the amplifier device is ful y passivated e for reliable operation. The hmC-AUh317 GaAs hemT mmiC medium power Amplifier is compatible lin with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, s - making it ideal for MCM and hybrid microcircuit r applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with ie rf probes. lif p m
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
A
A parameter min. Typ. max. Units frequency range 81 - 86 Ghz Gain 19 22 dB input return loss 9 dB output return loss 5 dB output power for 1dB Compression (p1dB) 17.5 dBm saturated output power (psat) 19.5 dBm supply Current (idd1+idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of idd1 = 80 mA and idd2 = 80 mA. products and product information are subject to change without notice. Inf F or o m r at ip on rfic ur e nis, hd e e d lbiy ve An ry alo a g n Ded vi cteos ip s la belciee v eo d rtd o e b r e sa: cc H ur iattte itae n d M rel iic a r bl o e. w H a o v we e ve rC , noo For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
3 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D
v04.0511
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features
This hmC-AUh317 is ideal for: Gain: 22 dB • Short Haul / High Capacity Links p1dB: +17.5 dBm 3 • Wireless LAN Bridges supply Voltage: +4V • Military & Space 50 ohm matched input/output • E-Band Communication Systems Die size: 2.65 x 1.6 x 0.05 mm ip h r - C
Functional Diagram
e
General Description
The hmC-AUh317 is a high dynamic range, three w stage GaAs hemT mmiC medium power Amplifier o which operates between 81 and 86 Ghz. The hmC- p AUh317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply r & voltage. All bond pads and the die backside are Ti/Au A metal ized and the amplifier device is ful y passivated e for reliable operation. The hmC-AUh317 GaAs hemT mmiC medium power Amplifier is compatible lin with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, s - making it ideal for MCM and hybrid microcircuit r applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with ie rf probes. lif p m
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
A
A parameter min. Typ. max. Units frequency range 81 - 86 Ghz Gain 19 22 dB input return loss 9 dB output return loss 5 dB output power for 1dB Compression (p1dB) 17.5 dBm saturated output power (psat) 19.5 dBm supply Current (idd1+idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of idd1 = 80 mA and idd2 = 80 mA. products and product information are subject to change without notice. Inf F or o m r at ip on rfic ur e nis, hd e e d lbiy ve An ry alo a g n Ded vi cteos ip s la belciee v eo d rtd o e b r e sa: cc H ur iattte itae n d M rel iic a r bl o e. w H a o v we e ve rC , noo For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
3 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D