Datasheet NTBG015N065SC1 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | MOSFET – SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 mW, 145 A |
| Seiten / Seite | 8 / 3 — NTBG015N065SC1. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test … |
| Dateiformat / Größe | PDF / 243 Kb |
| Dokumentensprache | Englisch |
NTBG015N065SC1. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test Condition. Min. Typ. Max. Unit. DRAIN−SOURCE DIODE CHARACTERISTICS
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NTBG015N065SC1 ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, 28 ns dIS/dt = 1000 A/ms Reverse Recovery Charge QRR 234 nC Reverse Recovery Energy EREC 23 mJ Peak Reverse Recovery Current IRRM 16 A Charge time Ta 17 ns Discharge time Tb 11 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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(TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, 28 ns dIS/dt = 1000 A/ms Reverse Recovery Charge QRR 234 nC Reverse Recovery Energy EREC 23 mJ Peak Reverse Recovery Current IRRM 16 A Charge time Ta 17 ns Discharge time Tb 11 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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