Datasheet TCKE712BNL (Toshiba) - 6

HerstellerToshiba
Beschreibung13.2 V, eFuse with Adjustable Over Current Protection
Seiten / Seite15 / 6 — TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 …
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TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k. Basic operation

TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k Basic operation

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TCKE712BNL
TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k

)
Ta = −40 to 85℃ Ta = 25℃ (Note 2) Characteristics Symbol Test Condition Unit Min. Typ. Max. Min. Max.
Basic operation
VIN under voltage lockout (UVLO) V threshold, rising IN_UVLO   4.15  4.00 4.4 V VIN under voltage lockout (UVLO) V hysteresis IN_UVhyst   0.2    V EN threshold voltage, rising VENR   1.1   1.2 V EN threshold voltage, falling VENF   0.95  0.85  V On resistance RON IOUT = 1 A,  53   80 mΩ Quiescent current (ON state) IQ VEN = 3 V, IOUT = 0 A  690   852 µA Quiescent current (OFF state) IQ(OFF) EN = 0 V  46   80 µA V Reverse blocking current I OUT = 5 V, VIN = 0 V, RB  0.001   1.0 µA VEN = 0 V EN pull down resistor REN EN = 1.1 V  20  10 55 MΩ dV/dT control dV/dT Voltage VdV/dT   3.1  2.8 3.4 V Charging Current IdV/dT VdV/dT = 0 V  5  3.5 6.5 µA dV/dT to OUT gain GAINdV/dT VdV/dT = 1V, IOUT = 1A  9.0  8.5 9.5  Over voltage protection OVP threshold, rising VOVPR  

1.2  1.14 1.26 V OVP pull down resistor ROVP VOVP = 1.2 V  22  11 60 MΩ FLAG FLAG Output Low Voltage VFLAG_L ISINK_FLAG = 1 mA     0.1 V FLAG Output High leakage IFLAG_LEAK VFLAG = 18 V     1 µA Over current protection VIN = 5 V, RILIM = 1.7 kΩ,  3.65  3.14 4.14 A VIN - VOUT = 2 V VIN = 9 V, RILIM = 2.4 kΩ,  2.58  2.21 2.99 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 3.1 kΩ,  2.00  1.71 2.35 A VIN - VOUT = 2 V Over current limit (Note3) IOUT_CL VIN = 12 V, RILIM = 3.6 kΩ,  1.72  1.47 2.04 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 6.2 kΩ,  1.00  0.78 1.21 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 12 kΩ,  0.51  0.35 0.64 A VIN - VOUT = 2 V I IOUT_CL Fast trip comparator level I OUT_CL FASTTRIP     × 2.5 × A 2.0
Thermal Protection
Thermal shut down Threshold TSD Tj  134    °C Note2: This parameter is warranted by design. Note3: Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature. © 2020 6 2020-12-14 Toshiba Electronic Devices & Storage Corporation