Datasheet CMPT2222A (Central Semiconductor) - 2

HerstellerCentral Semiconductor
BeschreibungSurface Mount NPN Silicon Transistor
Seiten / Seite3 / 2 — CMPT2222A. SURFACE MOUNT. NPN SILICON TRANSISTOR. ELECTRICAL …
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DokumentenspracheEnglisch

CMPT2222A. SURFACE MOUNT. NPN SILICON TRANSISTOR. ELECTRICAL CHARACTERISTICS - Continued:. SYMBOL TEST. CONDITIONS. MIN. MAX. UNITS

CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS MIN MAX UNITS

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CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 kΩ hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 kΩ hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 X10-4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 X10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 μS rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz 4.0 dB td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns
SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE:
1) Base 2) Emitter 3) Collector
MARKING CODE: C1P
R5 (1-February 2010)
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