Datasheet IRF6665PbF, IRF6665TRPbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | Digital Audio MOSFET |
| Seiten / Seite | 10 / 4 — Fig 7. Fig 8. Fig 10. Fig 9. Fig 11 |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
Fig 7. Fig 8. Fig 10. Fig 9. Fig 11
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IRF6665PbF 100 1000 Tc = 25°C Tj = 150°C ) Single Pulse OPERATION IN THIS AREA A( A 100 ( t t LIMITED BY R DS(on) n n er e r rr u u C C 10 100µsec ni e a c r r 10 D u o e S s - r TJ = -40°C o 1 1msec e t v - e TJ = 25°C ni DC R a r , TJ = 150°C D 10msec D , I S 0.1 I D VGS = 0V 1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 10 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area 5 5.5 ) V( 5.0 4 ega ) tl A o ( 4.5 V t n d e 3 l r o r h u s C e 4.0 r n h i t ar 2 et D a 3.5 , G ) I I D h D = 250µA t( 1 S ID = 1.0mA 3.0 GV ID = 1.0A 2.5 0 -75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 T T J , Temperature ( °C ) A , Ambient Temperature (°C)
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 ) A 10 0.20 Jht 0.10 Z ( 0.05 es Ri (°C/W) τi (sec) n R R R R R 1 2 3 4 5 o 1 0.02 R R R R R 1.6195 0.000126 p 1 2 3 4 5 s τJ τ e 0.01 τ A 2.1406 0.001354 J τ R A τ l 1 τ τ2 τ τ τ 3 4 5 22.2887 0.375850 a 1 τ τ 2 τ τ 3 4 5 mr 20.0457 7.410000 e Ci= τi/Ri 0.1 h Ci= τi/Ri 11.9144 99 T SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area 5 5.5 ) V( 5.0 4 ega ) tl A o ( 4.5 V t n d e 3 l r o r h u s C e 4.0 r n h i t ar 2 et D a 3.5 , G ) I I D h D = 250µA t( 1 S ID = 1.0mA 3.0 GV ID = 1.0A 2.5 0 -75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 T T J , Temperature ( °C ) A , Ambient Temperature (°C)
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 ) A 10 0.20 Jht 0.10 Z ( 0.05 es Ri (°C/W) τi (sec) n R R R R R 1 2 3 4 5 o 1 0.02 R R R R R 1.6195 0.000126 p 1 2 3 4 5 s τJ τ e 0.01 τ A 2.1406 0.001354 J τ R A τ l 1 τ τ2 τ τ τ 3 4 5 22.2887 0.375850 a 1 τ τ 2 τ τ 3 4 5 mr 20.0457 7.410000 e Ci= τi/Ri 0.1 h Ci= τi/Ri 11.9144 99 T SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com