Datasheet IRG4PH50UDPbF (Infineon) - 10

HerstellerInfineon
BeschreibungInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT
Seiten / Seite11 / 10 — Note:. IR WORLD HEADQUARTERS:
Revision01_00
Dateiformat / GrößePDF / 693 Kb
DokumentenspracheEnglisch

Note:. IR WORLD HEADQUARTERS:

Note: IR WORLD HEADQUARTERS:

Modelllinie für dieses Datenblatt

Textversion des Dokuments

IRG4PH50UDPbF Notes: QRepetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) SPulse width ≤ 80µs; duty factor ≤ 0.1%. TPulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY PART NUMBER LOT CODE 5657 INTERNATIONAL ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30 IN THE ASSEMBLY LINE "H" LOGO 035H 56 57 DATE CODE
Note:
"P" in assembly line position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000 LOT CODE WEEK 35 LINE H Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information
.
04/04 10 www.irf.com