Datasheet H11AV1, H11AV1A, H11AV2, H11AV2A (Fairchild)
| Hersteller | Fairchild |
| Beschreibung | 6-Pin DIP Optoisolators Transistor Output |
| Seiten / Seite | 7 / 1 — GlobalOptoisolator. ‘A’ Suffix = 0.400. Wide Spaced Leadform (Same as ‘T’ … |
| Dateiformat / Größe | PDF / 154 Kb |
| Dokumentensprache | Englisch |
GlobalOptoisolator. ‘A’ Suffix = 0.400. Wide Spaced Leadform (Same as ‘T’ Suffix.)
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Textversion des Dokuments
GlobalOptoisolator
The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V(BR)CEO Minimum •
‘A’ Suffix = 0.400
″
Wide Spaced Leadform (Same as ‘T’ Suffix.)
•
To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.
6 1
Applications
•
STANDARD THRU HOLE
General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Monitor and Detection Circuits • Regulation and Feedback Circuits
SCHEMATIC
• Solid State Relays 1 6
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) 2 5
Rating Symbol Value Unit
3 4
INPUT LED
Reverse Voltage VR 6 Volts Forward Current — Continuous IF 60 mA PIN 1. LED ANODE 2. LED CATHODE LED Power Dissipation @ TA = 25°C PD 120 mW 3. N.C. with Negligible Power in Output Detector 4. EMITTER Derate above 25°C 1.41 mW/°C 5. COLLECTOR
OUTPUT TRANSISTOR
6. BASE Collector–Emitter Voltage VCEO 70 Volts Emitter–Base Voltage VEBO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C PD 150 mW with Negligible Power in Input LED Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1) VISO 7500 Vac(pk) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C PD 250 mW Derate above 25°C 2.94 mW/°C Ambient Operating Temperature Range TA – 55 to +100 °C Storage Temperature Range Tstg – 55 to +150 °C Soldering Temperature (10 sec, 1/16″ from case) TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V(BR)CEO Minimum •
‘A’ Suffix = 0.400
″
Wide Spaced Leadform (Same as ‘T’ Suffix.)
•
To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.
6 1
Applications
•
STANDARD THRU HOLE
General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Monitor and Detection Circuits • Regulation and Feedback Circuits
SCHEMATIC
• Solid State Relays 1 6
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) 2 5
Rating Symbol Value Unit
3 4
INPUT LED
Reverse Voltage VR 6 Volts Forward Current — Continuous IF 60 mA PIN 1. LED ANODE 2. LED CATHODE LED Power Dissipation @ TA = 25°C PD 120 mW 3. N.C. with Negligible Power in Output Detector 4. EMITTER Derate above 25°C 1.41 mW/°C 5. COLLECTOR
OUTPUT TRANSISTOR
6. BASE Collector–Emitter Voltage VCEO 70 Volts Emitter–Base Voltage VEBO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C PD 150 mW with Negligible Power in Input LED Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1) VISO 7500 Vac(pk) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C PD 250 mW Derate above 25°C 2.94 mW/°C Ambient Operating Temperature Range TA – 55 to +100 °C Storage Temperature Range Tstg – 55 to +150 °C Soldering Temperature (10 sec, 1/16″ from case) TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.