Datasheet BC107/A/B/C, BC108/A/B/C, BC109/A/B/C (CDIL)

HerstellerCDIL
BeschreibungNPN Silicon Planar Transistors
Seiten / Seite4 / 1 — NPN SILICON PLANAR TRANSISTORS. BC107/A/B/C BC108/A/B/C BC109/A/B/C. …
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DokumentenspracheEnglisch

NPN SILICON PLANAR TRANSISTORS. BC107/A/B/C BC108/A/B/C BC109/A/B/C. TO-18 Metal Can Package

Datasheet BC107/A/B/C, BC108/A/B/C, BC109/A/B/C CDIL

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT Collector Emitter Voltage
VCEO 45 25 25 V
Collector Base Voltage
VCBO 50 30 30 V
Emitter Base Voltage
VEBO 6.0 5.0 5.0 V
Collector Current Continuous
IC 200 mA
Power Dissipation at Ta=25ºC
PD 300 mW
Derate above 25ºC
1.72 mW/ ºC
Power Dissipation at Tc=25ºC
PD 750 mW
Derate above 25ºC
4.29 mW/ ºC
Operating And Storage Junction
T - 65 to +200 ºC
Temperature Range
j, Tstg
THERMAL CHARACTERISTICS Junction to Ambient in free air
Rth (j-a) 583 ºC/W
Junction to Case
Rth (j-c) 233 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION BC107 BC108 BC109 UNIT Collector Emitter Voltage
VCEO IC=2mA, IB=0 >45 >25 >25 V
Emitter Base Voltage
VEBO IE=10µA, IC=0 >6 >5 >5 V
Collector Cut Off Current
I V <15 nA

CBO CB=45V, IE=0 VCB=25V, IE=0 <15 <15 nA VCB=45V, IE=0, Ta=125ºC <4 µA VCB=25V, IE=0, Ta=125ºC <4 <4 µA
DC Current Gain
hFE IC=10µA, VCE=5V
B Group
>40
C Group
>100 IC=2mA, VCE=5V
BC107
110-450
BC108
110-800
BC109
200-800
A Group
110-220
B Group
200-450
C Group
420-800 BC107_109Rev_3 231202E Continental Device India Limited
Data Sheet
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