Datasheet 6ED2230S12T (Infineon) - 6

HerstellerInfineon
Beschreibung1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP
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Revision01_03
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DokumentenspracheEnglisch

6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP. Absolute maximum ratings. Table 2

6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Absolute maximum ratings Table 2

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6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Absolute maximum ratings 3 Absolute maximum ratings Table 2 Absolute maximum ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameter Symbol Values Unit Note or Test Condition Min. Max.
Low side supply voltage VCC -0.3 25 V — Logic input voltage (LIN, HIN, RFE, ITRIP) VIN VSS - 5 VCC + 0.3 V — High-side floating well supply voltage VB1,2,3 -0.3 1225 V — High-side floating well supply return VS1,2,3 VB1,2,3 - VB1,2,3 V — voltage 25 + 0.3 Floating gate drive output voltage VHO1,2,3 VS1,2,3 - VB1,2,3 V — 0.3 + 0.3 Low-side output voltage VLO1,2,3 - 0.3 VCC + 0.3 V — Logic ground VSS VCC - 25 VCC + 0.3 V — Allowable VS offset supply transient dVS/dt — 50 V/ns — relative to COM Package power dissipation PD — 1.3 W TA +25ºC Thermal resistance, junction to ambient RthJA — 75 °C/W — Junction temperature TJ — 150 °C — Storage temperature TS -55 150 °C — Lead temperature (soldering, 10 seconds) TL — 300 °C — Datasheet 6 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4