Datasheet IQE013N04LM6CG (Infineon)

HerstellerInfineon
BeschreibungOptiMOS Power-MOSFET, 40V
Seiten / Seite13 / 1 — IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. …
Revision02_00
Dateiformat / GrößePDF / 1.4 Mb
DokumentenspracheEnglisch

IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. Productvalidation. Table1KeyPerformanceParameters. Parameter. Value. Unit

Datasheet IQE013N04LM6CG Infineon, Revision: 02_00

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IQE013N04LM6CG MOSFET OptiMOSTMPower-MOSFET,40V
PG-TTFN-9-1 1
Features
2 3 4 •Optimizedforsynchronousrectification 9 •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel 8 •Pb-freeleadplating;RoHScompliant 7 6 5 •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8
Table1KeyPerformanceParameters
Gate Pin 9
Parameter Value Unit
Source VDS 40 V Pin 1-4 RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC
Type/OrderingCode Package Marking RelatedLinks
IQE013N04LM6CG PG-TTFN-9-1 01304C6 - Final Data Sheet 1 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer