Datasheet FDC6312P (ON Semiconductor) - 3

HerstellerON Semiconductor
BeschreibungDual P-Channel 1.8V PowerTrench Specified MOSFET
Seiten / Seite7 / 3 — Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ …
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Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics

Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics

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Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA –1.5 V On Characteristics –20 V
–11 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th)
∆TJ
RDS(on) Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance ID = –250 µA,Referenced to 25°C 2 VGS = –4.5 V,
ID = –2.3 A
ID = –1.9 A
VGS = –2.5 V,
ID = –1.6 A
VGS = –1.8 V,
VGS=–4.5 V, ID =–2.3A, TJ=125°C 92
116
166
112 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.5 A 5.3 VDS = –10 V,
f = 1.0 MHz V GS = 0 V, 467 pF 85 pF 38 pF –0.4 –0.9 mV/°C
115
155
225
150 –7 mΩ A
S Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10 V,
VGS = –4.5 V, VDS = –10 V,
VGS = –4.5 V ID = –1 A,
RGEN = 6 Ω ID = –2.3 A, 8 16 ns 13 23 ns 18 32 ns 8 16 ns 4.4 7 nC 1.0 nC 0.8 nC Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –0.8 A
Voltage (Note 2) –0.7 –0.8 A –1.2 V Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when
mounted on a 0.125
in2 pad of 2 oz.
copper. b) 140°/W when mounted
on a .004 in2 pad of 2 oz
copper c) 180°/W when mounted on a
minimum pad. Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6312P Rev C (W) FDC6312P Electrical Characteristics