Datasheet AP64351Q (Diodes) - 6

AP64351Q Electrical Characteristics
(@ TJ = +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended operating junction temperature range, -40°C to +150°C, and input voltage range, 3.8V to 40V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Unit
ISHDN Shutdown Supply Current VEN = 0V — 1 — μA IQ Quiescent Supply Current VEN = Floating, VFB = 1.0V — 22 — μA POR VIN Undervoltage Rising Threshold — — 3.5 3.7 V UVLO VIN Undervoltage Falling Threshold — — 3.1 — V RDS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 75 — mΩ RDS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 45 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) — 4.2 5.0 6.5 A IVALLEY_LIMIT LS Valley Current Limit (Note 8) — — 5.5 — A IPFMPK PFM Peak Current Limit — — 750 — mA IZC Zero Cross Current Threshold — — 0 — mA fSW Oscillator Frequency — 500 570 640 kHz tON_MIN Minimum On-Time — — 100 — ns VFB Feedback Voltage CCM 0.792 0.800 0.808 V VEN_H EN Logic High Threshold — — 1.18 1.25 V VEN_L EN Logic Low Threshold — 1.03 1.09 — V VEN = 1.5V — 5.5 — μA IEN EN Input Current VEN = 1V 1 1.5 2 μA tSS Soft-Start Time CSS = 10nF — 2 — ms TSD Thermal Shutdown (Note 8) — — +160 — °C THys Thermal Shutdown Hysteresis (Note 8) — — +25 — °C Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design. AP64351Q 6 of 26 June 2020 Document number: DS42746 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated