Datasheet NV6123 (Navitas Semiconductor) - 4

HerstellerNavitas Semiconductor
Beschreibung650 V GaNFast Power IC
Seiten / Seite23 / 4 — NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. …
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DokumentenspracheEnglisch

NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. TYP. Final Datasheet. Rev Nov 22, 2019

NV6123 ESD Ratings SYMBOL PARAMETER MAX UNITS Thermal Resistance TYP Final Datasheet Rev Nov 22, 2019

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NV6123 ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.2 ºC/W ɵJC R (6) Junction-to-Ambient 40 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019