Datasheet SiZF300DT (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| Seiten / Seite | 13 / 3 — SiZF300DT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| Dateiformat / Größe | PDF / 265 Kb |
| Dokumentensprache | Englisch |
SiZF300DT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Drain-Source Body Diode Characteristics. Notes
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SiZF300DT
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics
Ch-1 - - 44 Continuous source-drain diode current IS TC = 25 °C Ch-2 - - 105 A Ch-1 - - 150 Pulse diode forward current a ISM Ch-2 - - 200 IS = 5 A, VGS = 0 V Ch-1 - 0.75 1.1 Body diode voltage VSD V IS = 5 A, VGS = 0 V Ch-2 - 0.44 0.7 Ch-1 - 36 75 Body diode reverse recovery time trr ns Ch-2 - 46 90 Channel-1 Ch-1 - 26 55 Body diode reverse recovery charge Q I rr F = 10 A, di/dt = 100 A/μs, TJ = 25 °C nC Ch-2 - 40 80 Ch-1 - 16 - Reverse recovery fall time ta Channel-2 Ch-2 - 18 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Ch-1 - 20 - Reverse recovery rise time tb Ch-2 - 28 -
Notes
a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width 300 μs, duty cycle 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0479-Rev. A, 30-Apr-2018
3
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics
Ch-1 - - 44 Continuous source-drain diode current IS TC = 25 °C Ch-2 - - 105 A Ch-1 - - 150 Pulse diode forward current a ISM Ch-2 - - 200 IS = 5 A, VGS = 0 V Ch-1 - 0.75 1.1 Body diode voltage VSD V IS = 5 A, VGS = 0 V Ch-2 - 0.44 0.7 Ch-1 - 36 75 Body diode reverse recovery time trr ns Ch-2 - 46 90 Channel-1 Ch-1 - 26 55 Body diode reverse recovery charge Q I rr F = 10 A, di/dt = 100 A/μs, TJ = 25 °C nC Ch-2 - 40 80 Ch-1 - 16 - Reverse recovery fall time ta Channel-2 Ch-2 - 18 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Ch-1 - 20 - Reverse recovery rise time tb Ch-2 - 28 -
Notes
a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width 300 μs, duty cycle 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0479-Rev. A, 30-Apr-2018
3
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000