Datasheet AP61100, AP61102 (Diodes) - 7

AP61100/AP61102 Typical Performance Characteristics
(AP61100/AP61102 @ TA = +25°C, VIN = 5V, VOUT = 1.8V, unless otherwise specified.) 0.600 High-Side MOSFET Low-Side MOSFET 0.599 150 0.598 140 0.597 130 120
)
0.596
Ω) V(
110
(m
0.595
FB
100
V
0.594
ON)(
90
DS
0.593
R
80 0.592 70 60 0.591 50 0.590 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 6. Power MOSFET RDS(ON) vs. Temperature Figure 7. VFB vs. Temperature
2.0 VIN Rising POR VIN Falling UVLO 1.8 2.20 1.6 2.15 1.4 2.10
A)
1.2
μ
2.05
( ) N
1.0 2.00
V( HD
0.8 1.95
I S NI V
1.90 0.6 1.85 0.4 1.80 0.2 1.75 0.0 1.70 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 8. ISHDN vs. Temperature Figure 9. VIN Power-On Reset and UVLO vs. Temperature
AP61100/AP61102 7 of 22 June 2020 Document number: DS42004 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated