Datasheet TPD4162F (Toshiba) - 10
| Hersteller | Toshiba |
| Beschreibung | High Voltage Monolithic Silicon Power IC |
| Seiten / Seite | 15 / 10 — TPD4162F. 11. Application Circuit Example. Figure 11.1 Application … |
| Dateiformat / Größe | PDF / 763 Kb |
| Dokumentensprache | Englisch |
TPD4162F. 11. Application Circuit Example. Figure 11.1 Application Circuit Example
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TPD4162F
VBS under-voltage protection VBSUVD ― 2.0 3.0 4.0 V VBS under-voltage protection V recovery BSUVR ― 2.5 3.5 4.5 V Refresh operating ON voltage VRFON Refresh operation ON 1.1 1.3 1.5 V Refresh operating OFF voltage VRFOFF Refresh operation OFF 3.1 3.8 4.6 V Triangular wave frequency fc R3 = 27 kΩ, C5 = 1000 pF 16.5 20 25 kHz Output-on delay time ton VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 2.5 3.5 µs Output-off delay time toff VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 2.0 3.0 µs FRD reverse recovery time trr VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 200 ns
11. Application Circuit Example Figure 11.1 Application Circuit Example
© 2020 10 2020-02-20 Toshiba Electronic Devices & Storage Corporation
VBS under-voltage protection VBSUVD ― 2.0 3.0 4.0 V VBS under-voltage protection V recovery BSUVR ― 2.5 3.5 4.5 V Refresh operating ON voltage VRFON Refresh operation ON 1.1 1.3 1.5 V Refresh operating OFF voltage VRFOFF Refresh operation OFF 3.1 3.8 4.6 V Triangular wave frequency fc R3 = 27 kΩ, C5 = 1000 pF 16.5 20 25 kHz Output-on delay time ton VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 2.5 3.5 µs Output-off delay time toff VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 2.0 3.0 µs FRD reverse recovery time trr VBB = 280 V, VCC = 15 V, Ioutp = 0.5 A 200 ns
11. Application Circuit Example Figure 11.1 Application Circuit Example
© 2020 10 2020-02-20 Toshiba Electronic Devices & Storage Corporation