Datasheet AD8505, AD8506, AD8508 (Analog Devices) - 5

HerstellerAnalog Devices
Beschreibung20 μA Maximum, Rail-to-Rail I/O, Zero Input Crossover Distortion Amplifiers
Seiten / Seite21 / 5 — Data Sheet. AD8505/AD8506/AD8508. ELECTRICAL CHARACTERISTICS—5 V …
RevisionF
Dateiformat / GrößePDF / 722 Kb
DokumentenspracheEnglisch

Data Sheet. AD8505/AD8506/AD8508. ELECTRICAL CHARACTERISTICS—5 V OPERATION. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

Data Sheet AD8505/AD8506/AD8508 ELECTRICAL CHARACTERISTICS—5 V OPERATION Table 2 Parameter Symbol Conditions Min Typ Max Unit

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Data Sheet AD8505/AD8506/AD8508 ELECTRICAL CHARACTERISTICS—5 V OPERATION
VSY = 5 V, VCM = VSY/2, TA = 25°C, RL = 100 kΩ to GND, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0 V ≤ VCM ≤ 5 V 0.5 2.5 mV −40°C ≤ TA ≤ +125°C 3.5 mV Input Bias Current IB 1 10 pA −40°C ≤ TA ≤ +85°C 100 pA −40°C ≤ TA ≤ +125°C 600 pA Input Offset Current IOS 0.5 5 pA −40°C ≤ TA ≤ +85°C 50 pA −40°C ≤ TA ≤ +125°C 130 pA Input Voltage Range −40°C ≤ TA ≤ +125°C 0 5 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5 V 90 105 dB −40°C ≤ TA ≤ +85°C 90 dB −40°C ≤ TA ≤ +125°C 85 dB Large-Signal Voltage Gain AVO 0.05 V ≤ VOUT ≤ 4.95 V, 105 120 dB RL = 100 kΩ to VCM −40°C ≤ TA ≤ +125°C 100 dB Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 2 µV/°C Input Resistance RIN 220 GΩ Input Capacitance, Differential Mode CINDM 3 pF Input Capacitance, Common Mode CINCM 4.2 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.98 4.99 V −40°C ≤ TA ≤ +125°C 4.98 V RL = 10 kΩ to GND 4.9 4.95 V −40°C ≤ TA ≤ +125°C 4.9 V Output Voltage Low VOL RL = 100 kΩ to VSY 2 5 mV −40°C ≤ TA ≤ +125°C 5 mV RL = 10 kΩ to VSY 10 25 mV −40°C ≤ TA ≤ +125°C 30 mV Short-Circuit Limit ISC VOUT = VSY or GND ±45 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 1.8 V to 5 V 100 110 dB −40°C ≤ TA ≤ +85°C 100 dB −40°C ≤ TA ≤ +125°C 95 dB Supply Current per Amplifier ISY AD8506/AD8508 VOUT = VSY/2 15 20 µA −40°C ≤ TA ≤ +125°C 25 µA AD8505 −40°C ≤ TA ≤ +125°C 25.5 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 10 pF, G = 1 13 mV/µs Gain Bandwidth Product GBP RL = 1 MΩ, CL = 20 pF, G = 1 95 kHz Phase Margin ΦM RL = 1 MΩ, CL = 20 pF, G = 1 60 Degrees NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 2.8 µV p-p Voltage Noise Density en f = 1 kHz 45 nV/√Hz Current Noise Density in f = 1 kHz 15 fA/√Hz Rev. F | Page 5 of 21 Document Outline Features Applications General Description Pin Configurations Revision History Specifications Electrical Characteristics—1.8 V Operation Electrical Characteristics—5 V Operation Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Theory of Operation Applications Information Pulse Oximeter Current Source Four-Pole, Low-Pass Butterworth Filter for Glucose Monitor Outline Dimensions Ordering Guide