Datasheet ADA4666-2 (Analog Devices) - 4

HerstellerAnalog Devices
Beschreibung18 V, 725 µA, 4 MHz CMOS RRIO Operational Amplifier
Seiten / Seite32 / 4 — ADA4666-2. Data Sheet. Parameter. Symbol. Test Conditions/Comments. Min. …
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DokumentenspracheEnglisch

ADA4666-2. Data Sheet. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit

ADA4666-2 Data Sheet Parameter Symbol Test Conditions/Comments Min Typ Max Unit

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ADA4666-2 Data Sheet Parameter Symbol Test Conditions/Comments Min Typ Max Unit
Channel Separation CS VIN = 17.9 V p-p, f = 10 kHz, RL = 10 kΩ 80 dB EMI Rejection Ratio of +IN x EMIRR VIN = 100 mV peak (200 mV p-p) f = 400 MHz 34 dB f = 900 MHz 42 dB f = 1800 MHz 50 dB f = 2400 MHz 60 dB NOISE PERFORMANCE Total Harmonic Distortion Plus Noise THD + N AV = 1, VIN = 5.4 V rms at 1 kHz Bandwidth = 80 kHz 0.0004 % Bandwidth = 500 kHz 0.0008 % Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 3 µV p-p Voltage Noise Density en f = 1 kHz 18 nV/√Hz f = 10 kHz 14 nV/√Hz Current Noise Density in f = 1 kHz 360 fA/√Hz Rev. 0 | Page 4 of 32 Document Outline Features Applications General Description Pin Connection Diagrams Revision History Specifications Electrical Characteristics—18 V Operation Electrical Characteristics—10 V Operation Electrical Characteristics—3.0 V Operation Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Applications Information Input Stage Gain Stage Output Stage Maximum Power Dissipation Rail-to-Rail Input and Output Comparator Operation EMI Rejection Ratio Current Shunt Monitor Active Filters Capacitive Load Drive Noise Considerations with High Impedance Sources Outline Dimensions Ordering Guide