Preliminary Datasheet ZHB6790 (Diodes)

HerstellerDiodes
BeschreibungSM-8 Bipolar Transistor H-Bridge
Seiten / Seite8 / 1 — SM-8. BIPOLAR. TRANSISTOR. H-BRIDGE. ZHB6790. PRELIMINARY. DATA. SHEET. …
Dateiformat / GrößePDF / 203 Kb
DokumentenspracheEnglisch

SM-8. BIPOLAR. TRANSISTOR. H-BRIDGE. ZHB6790. PRELIMINARY. DATA. SHEET. ISSUE. B. JULY. 1997. FEATURES. *. Compact. package. *. Low. on. state. losses. *. Low. drive

Preliminary Datasheet ZHB6790 Diodes

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SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 PARTMARKING DETAIL – ZHB6790 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPNs PNPs UNIT Collector-Base Voltage VCBO 50 -50 V Collector-Emitter Voltage VCEO 40 -40 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 6 -6 A Continuous Collector Current IC 2 -2 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C SCHEMATIC DIAGRAM CONNECTION DIAGRAM E1, E4 5 4 C1,C2 B1 6 B1 B4 E 3 1,E4 Q1 Q4 B2 C 7 3,C4 2 E2,E3 C1, C2 B4 8 1 B3 C3, C4 B2 Q2 Q3 B3 E2, E3