Datasheet BC516 (ON Semiconductor)

BC516 — PNP Darlington T BC516 PNP Darlington Transistor rans Features istor
• This device is designed for applications reguiring extremely high current gain at currents to 1 A. • Sourced from process 61. 1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information Part Number Top Mark Package Packing Method
BC516-D27Z BC516 TO-92 3L Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -10 V IC Collector Current - Continuous -1 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C © 2002 Semiconductor Components Industries, LLC. Publication Order Number: BC516-D27Z/D September-2017, Rev. 2