Datasheet J174, J175, J176, J177 (Philips) - 2
| Hersteller | Philips |
| Beschreibung | P-channel silicon field-effect transistors |
| Seiten / Seite | 6 / 2 — Philips Semiconductors. Product specification. J174; J175;. P-channel … |
| Dateiformat / Größe | PDF / 32 Kb |
| Dokumentensprache | Englisch |
Philips Semiconductors. Product specification. J174; J175;. P-channel silicon field-effect transistors. J176; J177. DESCRIPTION
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 DESCRIPTION
Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and handbook, halfpage 12 source connections. 3 d g s
PINNING
MAM388 1 = source 2 = gate 3 = drain Note: Drain and source are Fig.1 Simplified outline and symbol, TO-92. interchangeable.
QUICK REFERENCE DATA
Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −IG max. 50 mA Total power dissipation up to Tamb = 50 °C Ptot max. 400 mW
J174 J175 J176 J177
Drain current min. 20 7 2 1.5 mA −VDS = 15 V; VGS = 0 −IDSS max. 135 70 35 20 mA Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω April 1995 2 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS
Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and handbook, halfpage 12 source connections. 3 d g s
PINNING
MAM388 1 = source 2 = gate 3 = drain Note: Drain and source are Fig.1 Simplified outline and symbol, TO-92. interchangeable.
QUICK REFERENCE DATA
Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −IG max. 50 mA Total power dissipation up to Tamb = 50 °C Ptot max. 400 mW
J174 J175 J176 J177
Drain current min. 20 7 2 1.5 mA −VDS = 15 V; VGS = 0 −IDSS max. 135 70 35 20 mA Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω April 1995 2 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS