ZVN4210GMaximum Ratings (@TA = +25°C, unless otherwise specified.) CharacteristicSymbolValueUnitN Drain-Source Voltage VDSS 100 V OI Gate-Source Voltage VGSS 20 V T Continuous Drain Current VGS = 10V TA = +25°C ID 800 mA A Pulsed Drain Current IDM A MROFT NThermal Characteristics (@TA = +25°C, unless otherwise specified.) IC UECharacteristicSymbolValueUnitDC Total Power Dissipation O TA = +25°C PD 2 W NR Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C APVDWAEElectrical Characteristics (@TA = +25°C, unless otherwise specified.) NCharacteristicSymbolMinTypMaxUnitTest ConditionOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID =1mA 10 µA V Zero Gate Voltage Drain Current I DS = 100V, VGS = 0V DSS 100 µA VDS=80V, VGS=0V, T=125°C (Note 6) Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) 0.8 2.4 V VDS = VGS, ID = 1mA 1.5 Ω V Static Drain-Source On-Resistance GS = 10V, ID = 1.5A RDS(ON) 1.8 Ω VGS = 5V, ID = 0.5A 0.79 I Diode Forward Voltage (Note 5) V S =0.32A, VGS =0V SD V 0.89 IS =1.0A, VGS =0V On-State Drain Current (Note 5) ID(ON) 2.5 A VDS =25V, VGS =10V Forward Transconductance (Notes 5 and 6) gfs 250 mS VDS =25V,ID =1.5A I Reverse Recovery Time (to I F =0.45A, VGS =0V, IR =100mA, R =10%) tRR 135 ns VR =10V DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss 100 pF Output Capacitance Coss 40 pF VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss 12 pF Turn-On Delay Time (Note 7) tD(ON) 4 ns Turn-On Rise Time (Note 7) tR 8 ns VDD = 25V, ID=1.5A Turn-Off Delay Time (Note 7) tD(OFF) 20 ns Turn-Off Fall Time (Note 7) tF 30 ns Notes: 5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%. 6. Sample test. 7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator. Spice parameter data is available upon request for this device