Datasheet BC846, BC847, BC848, BC850 (ON Semiconductor) - 5
| Hersteller | ON Semiconductor |
| Beschreibung | NPN Epitaxial Silicon Transistor |
| Seiten / Seite | 6 / 5 — BC846 / BC847 / BC848 / BC850 —. Typical Performance Characteristics. … |
| Revision | 2 |
| Dateiformat / Größe | PDF / 310 Kb |
| Dokumentensprache | Englisch |
BC846 / BC847 / BC848 / BC850 —. Typical Performance Characteristics. 100. 0.1. NPN. 0.0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 1000. Epit
Modelllinie für dieses Datenblatt
BC846
BC847
BC850
Textversion des Dokuments
BC846 / BC847 / BC848 / BC850 — Typical Performance Characteristics
(Continued)
100 100
V = 5V CE f=1MHz NT NCE
10
CURRE A R
10
O CIT CT LLE ], CAPA T = 150oC T = 25oC T = -55oC F A A
1 1
A ], CO [p A obC [m I C
0.1 0.1 NPN 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000
V [V], BASE-EMITTER ON VOLTAGE BE(ON) VCB[V], COLLECTOR-BASE VOLTAGE
Epit Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance axia 1000 l
DUCT
Silicon T
V =5V CE H PRO IDT
100
ANDW B
r
N-
ansistor
GAI
10
, CURRENT Hz] [M f T
1 0.1 1 10 100
I [mA], COLLECTOR CURRENT C
Figure 9. Current Gain Bandwidth Product
www.onsemi.com 5
(Continued)
100 100
V = 5V CE f=1MHz NT NCE
10
CURRE A R
10
O CIT CT LLE ], CAPA T = 150oC T = 25oC T = -55oC F A A
1 1
A ], CO [p A obC [m I C
0.1 0.1 NPN 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000
V [V], BASE-EMITTER ON VOLTAGE BE(ON) VCB[V], COLLECTOR-BASE VOLTAGE
Epit Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance axia 1000 l
DUCT
Silicon T
V =5V CE H PRO IDT
100
ANDW B
r
N-
ansistor
GAI
10
, CURRENT Hz] [M f T
1 0.1 1 10 100
I [mA], COLLECTOR CURRENT C
Figure 9. Current Gain Bandwidth Product
www.onsemi.com 5