Datasheet BCV61 (Infineon) - 3

HerstellerInfineon
BeschreibungNPN Silicon Double Transistor
Seiten / Seite7 / 3 — BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. …
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DokumentenspracheEnglisch

BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. Characteristics. AC characteristics for transistor T1

BCV61 Electrical Characteristics Parameter Symbol Values Unit min typ max Characteristics AC characteristics for transistor T1

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BCV61 Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. Characteristics
Base-emitter forward voltage VBES V IE = 10 µA 0.4 - - IE = 250 mA - - 1.8 Matching of transistor T1 and transistor T2 IC1 / IC2 - at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 Thermal coupling of transistor T1 and IE2 - 5 - mA transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1
AC characteristics for transistor T1
Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 9 - VEB = 0.5 V, f = 1 MHz Noise figure F - 2 - dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance h11e - 4.5 - kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio h12e - 2 - 10-4 IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio h21e 100 - 900 - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance h22e - 30 - µS IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 2011-10-13