Philips Semiconductors Product specification Rectifier diodes BYV29 series ultrafast ELECTRICAL CHARACTERISTICS T = 25 ˚C unless otherwise stated j SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT V Forward voltage I = 8 A; T = 150˚C - 0.90 1.03 V F F j I = 8 A - 1.05 1.25 V F I = 20 A - 1.20 1.40 V F I Reverse current V = V - 2.0 50 µA R R RRM V = V ; T = 100 ˚C - 0.1 0.35 mA R RRM j Q Reverse recovery charge I = 2 A to V ≥ 30 V; - 40 60 nC s F R dI /dt = 20 A/µs F t Reverse recovery time I = 1 A to V ≥ 30 V; - 50 60 ns rr F R dI /dt = 100 A/µs F I Peak reverse recovery current I = 10 A to V ≥ 30 V; - 4.0 5.5 A rrm F R dI /dt = 50 A/µs; T = 100˚C F j V Forward recovery voltage I = 10 A; dI /dt = 10 A/µs - 2.5 - V fr F F dI PF / W BYV29 Tmb(max) / C I 15 112.5 F F Vo = 0.8900 V Rs = 0.0190 Ohms dt D = 1.0 0.5 t rr 10 125 time 0.2 0.1 5 t 137.5 p Q 100% tp I D = s 10% T I R I t T rrm 0 150 0 5 10 15 IF(AV) / A Fig.1. Definition of t , Q and I Fig.3. Maximum forward dissipation P = f(I ); rr s rrm F F(AV) square wave where I =I x √D. F(AV) F(RMS) I PF / W BYV29 Tmb(max) / C F 12 120 Vo = 0.89V a = 1.57 Rs = 0.019 Ohms 10 125 1.9 2.2 8 130 2.8 time 4 6 135 V F 4 140 V fr 2 145 V F 0 150 0 2 4 6 8 10 time IF(AV) / A Fig.2. Definition of V Fig.4. Maximum forward dissipation P = f(I ); fr F F(AV) sinusoidal current waveform where a = form factor = I / I . F(RMS) F(AV) September 1998 2 Rev 1.300 Document Outline FEATURES SYMBOL QUICK REFERENCE DATA GENERAL DESCRIPTION PINNING LIMITING VALUES THERMAL RESISTANCES ELECTRICAL CHARACTERISTICS PACKAGE OUTLINE DEFINITIONS