Datasheet BC846DS (NXP)

HerstellerNXP
Beschreibung65 V, 100 mA NPN/NPN general-purpose transistor pair
Seiten / Seite12 / 1 — BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor. Rev. 01 — 17 …
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DokumentenspracheEnglisch

BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor. Rev. 01 — 17 July 2009. Product data sheet. Product profile

Datasheet BC846DS NXP

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BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor
VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450 Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents