Datasheet BC556B, BC557A, BC557B, BC557C, BC558B (ON Semiconductor) - 3

HerstellerON Semiconductor
BeschreibungPNP Bipolar Transistor
Seiten / Seite7 / 3 — BC556B, BC557A, B, C, BC558B. BC557/BC558. Figure 1. Normalized DC …
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BC556B, BC557A, B, C, BC558B. BC557/BC558. Figure 1. Normalized DC Current Gain. Figure 2. “Saturation” and “On” Voltages

BC556B, BC557A, B, C, BC558B BC557/BC558 Figure 1 Normalized DC Current Gain Figure 2 “Saturation” and “On” Voltages

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BC556B, BC557A, B, C, BC558B BC557/BC558
2.0 −1.0 −0.9 T 1.5 A = 25°C VCE = −10 V GAIN TA = 25°C −0.8 VBE(sat) @ IC/IB = 10 1.0 −0.7 TS) −0.6 VBE(on) @ VCE = −10 V 0.7 −0.5 TAGE (VOL 0.5 −0.4 V, VOL −0.3 −0.2 , NORMALIZED DC CURRENT 0.3 h FE −0.1 VCE(sat) @ IC/IB = 10 0.2 0 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages
−2.0 1.0 C)° T −55°C to +125°C A = 25°C 1.2 TAGE (V) −1.6 (mV/ 1.6 −1.2 COEFFICIENT 2.0 IC = IC = −50 mA I OR−EMITTER VOL −0.8 C = −200 mA −10 mA TURE 2.4 IC = −100 mA I −0.4 C = −20 mA , COLLECT 2.8 , TEMPERA V CE VBθ 0 −0.02 −0.1 −1.0 −10 −20 −0.2 −1.0 −10 −100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient
10 400 (MHz) Cib 300 7.0 TA = 25°C 200 5.0 150 VCE = −10 V TA = 25°C ANCE (pF) 100 3.0 Cob 80 ACIT 60 2.0 C, CAP 40 30 1.0 20 T −0.4 f, CURRENT−GAIN − BANDWIDTH PRODUCT −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3