Datasheet MPSA63, MPSA64 (ON Semiconductor)

MPSA63, MPSA64
MPSA64 is a Preferred Device
Darlington Transistors
PNP Silicon Features
• These are Pb- Free Devices*
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COLLECTOR 3
MAXIMUM RATINGS
BASE 2
Rating Symbol Value Unit
Collector- Emitter Voltage VCES - 30 Vdc Collector- Base Voltage VCBO - 30 Vdc EMITTER 1 Emitter- Base Voltage VEBO - 10 Vdc Collector Current - Continuous IC - 500 mAdc Total Device Dissipation PD @ TA = 25°C 625 mW Derate above 25°C 5.0 mW/°C
TO- 92
Total Device Dissipation PD
CASE 29
@ TC = 25°C 1.5 W
STYLE 1
Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C 1 1 Temperature Range 2 2 3 3
THERMAL CHARACTERISTICS
STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL
Rating Symbol Max Unit
AMMO PACK Thermal Resistance, Junction- to- Ambient RθJA 200 °C/W Thermal Resistance, Junction- to- Case R
MARKING DIAGRAM
θJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS A6x AYWW G G xx = 3, or 4 A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping informationin thepackage dimensions section on page 2 of this data sheet. *For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
April, 2007 - Rev. 0 MPSA63/D