Datasheet MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G (ON Semiconductor) - 3

HerstellerON Semiconductor
BeschreibungSurface Mount Schottky Power Rectifier
Seiten / Seite4 / 3 — MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,. …
Revision14
Dateiformat / GrößePDF / 134 Kb
DokumentenspracheEnglisch

MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,. SBRS8340T3G. TYPICAL ELECTRICAL CHARACTERISTICS

MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G TYPICAL ELECTRICAL CHARACTERISTICS

Modelllinie für dieses Datenblatt

Textversion des Dokuments

MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G TYPICAL ELECTRICAL CHARACTERISTICS
(continued) 1.E−01 1.E−01 TJ = 125°C 1.E−02 TJ = 125°C 1.E−02 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 TJ = 25°C 1.E−05 1.E−05 , REVERSE CURRENT (AMPS) TJ = 25°C I R 1.E−06 , MAXIMUM REVERSE CURRENT (AMPS) 1.E−06 0 5 10 15 20 25 30 35 40 I R 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
5 2 Freq = 20 kHz 4.5 dc 1.8 RqJL = 11°C/W SQUARE 4 ATION (W) 1.6 WAVE dc 3.5 IPK/IO = p 1.4 3 1.2 IPK/IO = 5 SQUARE WAVE 2.5 1 ARD CURRENT (AMPS) W 2 0.8 1.5 0.6 1 0.4 VERAGE POWER DISSIP 0.5 0.2 VERAGE FOR , A 0 0 , A 90 100 110 120 130 140 150 P FO I O 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
700 TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 600 500 ANCE (pF) 400 ACIT 300 C, CAP 200 100 00 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance www.onsemi.com 3