Datasheet LTC3412A (Analog Devices) - 3

HerstellerAnalog Devices
Beschreibung3A, 4MHz, Monolithic Synchronous Step-Down Regulator
Seiten / Seite20 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply …
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DokumentenspracheEnglisch

ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

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LTC3412A
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA ≈ TJ = 25°C. VIN = 3.3V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SVIN Signal Input Voltage Range 2.25 5.5 V VFB Regulated Feedback Voltage (Note 3) E-, I-Grades l 0.784 0.800 0.816 V MP-Grade l 0.780 0.800 0.816 V IFB Voltage Feedback Leakage Current 0.1 0.2 µA ∆VFB Reference Voltage Line Regulation VIN = 2.7V to 5.5V (Note 3) l 0.04 0.2 %V VLOADREG Output Voltage Load Regulation Measured in Servo Loop, VITH = 0.36V l 0.02 0.2 % Measured in Servo Loop, VITH = 0.84V l –0.02 –0.2 % ∆VPGOOD Power Good Range ±7.5 ±9 % RPGOOD Power Good Pull-Down Resistance 120 200 Ω IQ Input DC Bias Current (Note 4) Active Current VFB = 0.78V, VITH = 1V 250 330 µA Sleep VFB = 1V, VITH = 0V 64 80 µA Shutdown VRUN = 0V, VMODE = 0V 0.02 1 µA fOSC Switching Frequency ROSC = 294kΩ 0.88 1 1.1 MHz Switching Frequency Range (Note 6) 0.3 4 MHz fSYNC SYNC Capture Range (Note 6) 0.3 4 MHz RPFET RDS(ON) of P-Channel FET ISW = 1A (Note 7) 77 110 mΩ RNFET RDS(ON) of N-Channel FET ISW = –1A (Note 7) 65 90 mΩ ILIMIT Peak Current Limit 4.5 6 A VUVLO Undervoltage Lockout Threshold 1.75 2 2.25 V ILSW SW Leakage Current VRUN = 0V, VIN = 5.5V 0.1 1 µA VRUN RUN Threshold 0.5 0.65 0.8 V IRUN RUN/SS Leakage Current 1 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
The LTC3412A is tested in a feedback loop that adjusts VFB to may cause permanent damage to the device. Exposure to any Absolute achieve a specified error amplifier output voltage (ITH). Maximum Rating condition for extended periods may affect device
Note 4:
Dynamic supply current is higher due to the internal gate charge reliability and lifetime. being delivered at the switching frequency.
Note 2:
The LTC3412AE is guaranteed to meet performance specifications
Note 5:
TJ is calculated from the ambient temperature TA and power from 0°C to 85°C. Specifications over the –40°C to 125°C operating dissipation as follows: LTC3412AFE: TJ = TA + PD (38°C/W) junction temperature range are assured by design, characterization and LTC3412AUF: TJ = TA + PD (34°C/W) correlation with statistical process controls. The LTC3412AI is guaranteed
Note 6:
4MHz operation is guaranteed by design and not production tested. to meet performance specifications over the –40°C to 125°C operating junction temperature range. The LTC3412AMP is guaranteed and tested to
Note 7:
Switch on resistance is guaranteed by design and test condition in meet performance specifications over the full –55°C to 125°C operating the UF package and by final test correlation in the FE package. junction temperature range. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. 3412aff Fo F r o rmo m r o e r e inf n o f r o m r a m t a iton o n ww w w w . w line n a e r a .rco c m o / m L / T L C T 3 C 41 3 2 41 A 2 3 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Package Description Revision History Related Parts