Datasheet IRF4905SPbF, IRF4905LPbF (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET Features |
| Seiten / Seite | 12 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b. Fig 14 |
| Dateiformat / Größe | PDF / 370 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b. Fig 14
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF4905S/L L VDS 600 )J RG D.U.T V m I DD ( D y I A 500 TOP -17A AS gr DRIVER -20V e -30A n t 0.01 p Ω E BOTTOM -42A e 400 hcnalav 300 A 15V esluP 200 e
Fig 12a.
Unclamped Inductive Test Circuit lgni I S AS 100 , S AE 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) tp V(BR)DSS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms Vs. Drain Current QG 3.6 10V QGS QGD ) V( e VG ga 3.2 tloV dl Charge oh ID = -250µA
Fig 13a.
Basic Gate Charge Waveform ser 2.8 h Current Regulator t Same Type as D.U.T. etaG ) 50KΩ ht( 2.4 .2µF 12V S .3µF GV - - V D.U.T. + DS 2.0 VGS -75 -50 -25 0 25 50 75 100 125 150 -3mA TJ , Temperature ( °C ) I I G D Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit lgni I S AS 100 , S AE 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) tp V(BR)DSS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms Vs. Drain Current QG 3.6 10V QGS QGD ) V( e VG ga 3.2 tloV dl Charge oh ID = -250µA
Fig 13a.
Basic Gate Charge Waveform ser 2.8 h Current Regulator t Same Type as D.U.T. etaG ) 50KΩ ht( 2.4 .2µF 12V S .3µF GV - - V D.U.T. + DS 2.0 VGS -75 -50 -25 0 25 50 75 100 125 150 -3mA TJ , Temperature ( °C ) I I G D Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature 6 www.irf.com