Datasheet IRF4905SPbF, IRF4905LPbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET Features |
| Seiten / Seite | 12 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Dateiformat / Größe | PDF / 370 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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Textversion des Dokuments
IRF4905S/L 7000 20 VGS = 0V, f = 1 MHZ C I iss = Cgs + Cgd, Cds SHORTED ) D= -42A 6000 C V( V rss = Cgd DS= -44V e 16 C g VDS= -28V ) oss = Cds + Cgd a 5000 tl VDS= -11V F o p( V e e c c 12 4000 n Ciss r a u ti o c S a - p 3000 ot a - 8 e C t , Coss a C G 2000 , SG 4 V 1000 - Crss 0 0 0 40 80 120 160 200 1 10 100 Q -V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R ) DS(on) A A ( t t n 100.0 n e e r r r r u T u 100 100µsec C J = 150°C C n 1msec i e a c r ru D 10.0 o e S 10msec s - r o e t- v n e ia 10 LIMITED BY PACKAGE R r , TJ = 25°C D 1.0 D , DC I S- I D- Tc = 25°C Tj = 150°C VGS = 0V Single Pulse 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 0 1 10 100 -VSD, Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R ) DS(on) A A ( t t n 100.0 n e e r r r r u T u 100 100µsec C J = 150°C C n 1msec i e a c r ru D 10.0 o e S 10msec s - r o e t- v n e ia 10 LIMITED BY PACKAGE R r , TJ = 25°C D 1.0 D , DC I S- I D- Tc = 25°C Tj = 150°C VGS = 0V Single Pulse 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 0 1 10 100 -VSD, Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com