Datasheet IRF3205PbF (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| Dateiformat / Größe | PDF / 221 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
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Textversion des Dokuments
IRF3205PbF 500 J) I 15V m D TOP 25A gy ( 44A 400 ner BOTTOM 62A L DRIVER VDS 300 R anche E G D.U.T + - VDD val IAS A 20V t 0.01 200 p Ω ulse A
Fig 12a.
Unclamped Inductive Test Circuit e P ingl 100 S V(BR)DSS , t AS p E 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + 10 V VDS Q D.U.T. - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit e P ingl 100 S V(BR)DSS , t AS p E 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + 10 V VDS Q D.U.T. - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com