Datasheet DN2530 (Microchip) - 6
| Hersteller | Microchip |
| Beschreibung | N-Channel, Depletion-Mode, Vertical DMOS FET |
| Seiten / Seite | 13 / 6 — DN2530. Variation with Temperature. DSS. On-Resistance vs. Drain Current. … |
| Dateiformat / Größe | PDF / 669 Kb |
| Dokumentensprache | Englisch |
DN2530. Variation with Temperature. DSS. On-Resistance vs. Drain Current. Transfer Characteristics. and R. GS(OFF). DS(ON)
Modelllinie für dieses Datenblatt
Textversion des Dokuments
DN2530 BV Variation with Temperature DSS On-Resistance vs. Drain Current
1.10 50 V = -5V V = 0V GS GS I = 100mA D 1.05 40 1.00 30 (ohms) (normalized) 0.95 DS(ON) 20 DSS R BV 0.90 10 0.85 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 T (°C) I (amps) j D
Transfer Characteristics V and R Variation with Temperature GS(OFF) DS(ON)
1.0 2.5 V = 10V DS 0.8 T = -55°C A 2 R @ I = 150mA DS(ON) D 25°C 0.6 125°C 1.5 V @ 10mA GS(OFF) (amperes) (normalized) I D 0.4 1 GS(th) V 0.2 0.5 0 0 -2 -1 0 1 2 -50 0 50 100 150 V (Volts) T (°C) GS j
Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
200 15 f = 1MHz V = -10V GS CISS 150 10 V = 40V DS V = 20V 100 5 DS (volts) 250pF GS V C (picofarads) 50 0 COSS C 152pf RSS 0 -5 0 10 20 30 40 0 1 2 3 4 5 V (Volts) Q (Nanocoulombs) DS C
FIGURE 3-3:
Typical Performance Curves (continued) DS20005451A-page 6 2016 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit FIGURE 3-2: Typical Performance Curves FIGURE 3-3: Typical Performance Curves (continued) 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham
1.10 50 V = -5V V = 0V GS GS I = 100mA D 1.05 40 1.00 30 (ohms) (normalized) 0.95 DS(ON) 20 DSS R BV 0.90 10 0.85 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 T (°C) I (amps) j D
Transfer Characteristics V and R Variation with Temperature GS(OFF) DS(ON)
1.0 2.5 V = 10V DS 0.8 T = -55°C A 2 R @ I = 150mA DS(ON) D 25°C 0.6 125°C 1.5 V @ 10mA GS(OFF) (amperes) (normalized) I D 0.4 1 GS(th) V 0.2 0.5 0 0 -2 -1 0 1 2 -50 0 50 100 150 V (Volts) T (°C) GS j
Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
200 15 f = 1MHz V = -10V GS CISS 150 10 V = 40V DS V = 20V 100 5 DS (volts) 250pF GS V C (picofarads) 50 0 COSS C 152pf RSS 0 -5 0 10 20 30 40 0 1 2 3 4 5 V (Volts) Q (Nanocoulombs) DS C
FIGURE 3-3:
Typical Performance Curves (continued) DS20005451A-page 6 2016 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit FIGURE 3-2: Typical Performance Curves FIGURE 3-3: Typical Performance Curves (continued) 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham