Datasheet LTC1852, LTC1853 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | 8-Channel, 10-Bit/12-Bit, 400ksps, Low Power, Sampling ADCs |
| Seiten / Seite | 24 / 4 — INTERNAL REFERENCE TA = 25°C. (Notes 5, 6) PARAMETER. CONDITIONS. MIN. … |
| Dateiformat / Größe | PDF / 246 Kb |
| Dokumentensprache | Englisch |
INTERNAL REFERENCE TA = 25°C. (Notes 5, 6) PARAMETER. CONDITIONS. MIN. TYP. MAX. UNITS. DIGITAL INPUTS AND DIGITAL OUTPUTS. The
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LTC1852/LTC1853
INTERNAL REFERENCE TA = 25°C. (Notes 5, 6) PARAMETER CONDITIONS MIN TYP MAX UNITS
REFOUT Output Voltage IOUT = 0 2.48 2.50 2.52 V REFOUT Output Temperature Coeffi cient IOUT = 0 ±15 ppm/°C REFOUT Line Regulation 2.7 ≤ VDD ≤ 5.5, IOUT = 0 0.01 LSB/V Reference Buffer Gain 1.6368 1.6384 1.6400 V/V REFCOMP Output Voltage External 2.5V Reference (VDD = 5V) 4.092 4.096 4.100 V Internal 2.5V Reference (VDD = 5V) 4.060 4.096 4.132 V REFCOMP Impedance Impedance to GND, REFIN = VDD 19.2 kΩ
DIGITAL INPUTS AND DIGITAL OUTPUTS The
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDD = 5V (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±5 μA CIN Digital Input Capacitance 1.5 pF VOH High Level Output Voltage VDD = 4.75V, IO = –10μA 4.5 V VDD = 4.75V, IO = – 200μA ● 4 V VOL Low Level Output Voltage VDD = 4.75V, IO = 160μA 0.5 V VDD = 4.75V, IO = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D11 to D0, A0, A1, A2OUT, DIFFOUT VOUT = 0V to VDD, CS High ● ±10 μA COZ Hi-Z Capacitance D11 to D0 CS High (Note 9) ● 15 pF ISOURCE Output Source Current VOUT = 0V –20 mA ISINK Output Sink Current VOUT = VDD 30 mA
DIGITAL INPUTS AND DIGITAL OUTPUTS The
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDD = 5V (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 3.3V ● 1.9 V VIL Low Level Input Voltage VDD = 2.7V ● 0.45 V IIN Digital Input Current VIN = 0V to VDD ● ±5 μA CIN Digital Input Capacitance 1.5 pF VOH High Level Output Voltage VDD = 2.7V, IO = –10μA 2.5 V VDD = 2.7V, IO = – 200μA ● 2 V VOL Low Level Output Voltage VDD = 2.7V, IO = 160μA 0.05 V VDD = 2.7V, IO = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D11 to D0, A0, A1, A2OUT, DIFFOUT VOUT = 0V to VDD, CS High ● ±10 μA COZ Hi-Z Capacitance D11 to D0 CS High (Note 9) ● 15 pF ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = VDD 15 mA 18523fa 4
INTERNAL REFERENCE TA = 25°C. (Notes 5, 6) PARAMETER CONDITIONS MIN TYP MAX UNITS
REFOUT Output Voltage IOUT = 0 2.48 2.50 2.52 V REFOUT Output Temperature Coeffi cient IOUT = 0 ±15 ppm/°C REFOUT Line Regulation 2.7 ≤ VDD ≤ 5.5, IOUT = 0 0.01 LSB/V Reference Buffer Gain 1.6368 1.6384 1.6400 V/V REFCOMP Output Voltage External 2.5V Reference (VDD = 5V) 4.092 4.096 4.100 V Internal 2.5V Reference (VDD = 5V) 4.060 4.096 4.132 V REFCOMP Impedance Impedance to GND, REFIN = VDD 19.2 kΩ
DIGITAL INPUTS AND DIGITAL OUTPUTS The
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDD = 5V (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±5 μA CIN Digital Input Capacitance 1.5 pF VOH High Level Output Voltage VDD = 4.75V, IO = –10μA 4.5 V VDD = 4.75V, IO = – 200μA ● 4 V VOL Low Level Output Voltage VDD = 4.75V, IO = 160μA 0.5 V VDD = 4.75V, IO = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D11 to D0, A0, A1, A2OUT, DIFFOUT VOUT = 0V to VDD, CS High ● ±10 μA COZ Hi-Z Capacitance D11 to D0 CS High (Note 9) ● 15 pF ISOURCE Output Source Current VOUT = 0V –20 mA ISINK Output Sink Current VOUT = VDD 30 mA
DIGITAL INPUTS AND DIGITAL OUTPUTS The
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDD = 5V (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 3.3V ● 1.9 V VIL Low Level Input Voltage VDD = 2.7V ● 0.45 V IIN Digital Input Current VIN = 0V to VDD ● ±5 μA CIN Digital Input Capacitance 1.5 pF VOH High Level Output Voltage VDD = 2.7V, IO = –10μA 2.5 V VDD = 2.7V, IO = – 200μA ● 2 V VOL Low Level Output Voltage VDD = 2.7V, IO = 160μA 0.05 V VDD = 2.7V, IO = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D11 to D0, A0, A1, A2OUT, DIFFOUT VOUT = 0V to VDD, CS High ● ±10 μA COZ Hi-Z Capacitance D11 to D0 CS High (Note 9) ● 15 pF ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = VDD 15 mA 18523fa 4